| 摘要 |
Provided is a thin film capacitive storage cell, which has a high capacitance and excellent strength. A capacitive storage cell of the first embodiment is provided with a first laminated base material (11) having laminated therein a first composite layer (12) wherein conductive or semiconductive first particles (12A) are embedded in an organic polymer, and a first base material (13) composed of a first conductive film or a first semiconductor film. On the first base material (13) of the first laminated base material (11), a first insulating layer (21) is provided, and on the first composite layer (12) of the first laminated base material, a second insulating layer (22) is provided. On the first insulating layer (21), a first conductive path (31), which extends in the lengthwise direction of the first laminated base material (11) (the direction toward the further side from the front of the sheet in fig. 1) is provided, and on the second insulating layer (22), a second conductive path (32) is provided such that the path extends in the lengthwise direction of the first laminated base material, and that the path is in parallel to the first conductive path (31). |
