| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve a highly-reliable MIS compound semiconductor device which can obtain assured normally-off by a comparatively simple configuration by employing a recessed gate structure. <P>SOLUTION: A compound semiconductor device comprises: a compound semiconductor lamination structure 2 formed on a Si substrate 1 and including an electron supply layer 2d, an electron transit layer 2c formed under the electron supply layer 2d and in which a two-dimensional electron gas is generated at a boundary with the electron supply layer 2d, and a channel layer 2b formed under the electron transit layer 2c and composed of a material having polarization larger than that of the electron transit layer 2c; and a gate electrode 5 filling via a gate insulation film 4, a groove 10A reaching the channel layer 2b formed in the compound semiconductor lamination structure 2. <P>COPYRIGHT: (C)2013,JPO&INPIT |
