发明名称 PROCESS MONITORING APPARATUS AND PROCESS MONITORING METHOD
摘要 The present invention relates to a process monitoring apparatus and a process monitoring method. In the process monitoring apparatus (4), respectively obtained by an image acquisition part (3a-3d) are: a pattern image representing a photosensitive pattern of a resist layer before a development process or after an exposure process for the resist layer formed on a main surface of a film-shaped base material; a pattern image representing a resist pattern after the development process; a pattern image representing the main surface before a resist stripping process or after an etching process for the main surface on which the resist pattern is formed; a pattern image representing a pattern of the main surface after the resist stripping process. In a defect detection part (41), compared are two pattern images obtained right before and after each of the development process, the etching process, and the resist stripping process, thereby preventing detection of fake defects. Thus, it is possible to detect errors formed in each process.
申请公布号 KR20160037736(A) 申请公布日期 2016.04.06
申请号 KR20150095159 申请日期 2015.07.03
申请人 SCREEN HOLDINGS CO., LTD. 发明人 FUJIWARA NARIAKI
分类号 G03F7/20;G01N21/88;G01N21/956;H01L21/66;H01L21/67 主分类号 G03F7/20
代理机构 代理人
主权项
地址