摘要 |
The present invention relates to a process monitoring apparatus and a process monitoring method. In the process monitoring apparatus (4), respectively obtained by an image acquisition part (3a-3d) are: a pattern image representing a photosensitive pattern of a resist layer before a development process or after an exposure process for the resist layer formed on a main surface of a film-shaped base material; a pattern image representing a resist pattern after the development process; a pattern image representing the main surface before a resist stripping process or after an etching process for the main surface on which the resist pattern is formed; a pattern image representing a pattern of the main surface after the resist stripping process. In a defect detection part (41), compared are two pattern images obtained right before and after each of the development process, the etching process, and the resist stripping process, thereby preventing detection of fake defects. Thus, it is possible to detect errors formed in each process. |