发明名称 Multiple complementary gas distribution assemblies
摘要 In one embodiment, an apparatus includes a first gas distribution assembly that includes a first gas passage for introducing a first process gas into a second gas passage that introduces the first process gas into a processing chamber and a second gas distribution assembly that includes a third gas passage for introducing a second process gas into a fourth gas passage that introduces the second process gas into the processing chamber. The first and second gas distribution assemblies are each adapted to be coupled to at least one chamber wall of the processing chamber. The first gas passage is shaped as a first ring positioned within the processing chamber above the second gas passage that is shaped as a second ring positioned within the processing chamber. The gas distribution assemblies may be designed to have complementary characteristic radial film growth rate profiles.
申请公布号 US9303318(B2) 申请公布日期 2016.04.05
申请号 US201213649488 申请日期 2012.10.11
申请人 Applied Materials, Inc. 发明人 Ng Tuoh-Bin;Melnik Yuriy;Pang Lily L;Tuncel Eda;Chen Lu;Nguyen Son T
分类号 C23C16/455;C23C16/30;C23C16/448 主分类号 C23C16/455
代理机构 Blakely, Sokoloff, Taylor & Zafman LLP 代理人 Blakely, Sokoloff, Taylor & Zafman LLP
主权项 1. An apparatus, comprising: a first gas distribution assembly that includes a first gas passage for introducing a first process gas into a second gas passage that introduces the first process gas into a processing chamber; and a second gas distribution assembly that includes a third gas passage for introducing a second process gas into a fourth gas passage that introduces the second process gas into the processing chamber, wherein the first and second gas distribution assemblies are each adapted to be coupled to at least one chamber wall of a processing chamber, wherein the second gas passage and the fourth gas passage each include a plurality of orifices to introduce the first and second process gases into the processing chamber, wherein the first gas passage is shaped as a first annular ring within the processing chamber at a first height above the second gas passage that is shaped as a second annular ring for uniform distribution of the first process gas at a different second height within the processing chamber, wherein the third gas passage is positioned within the processing chamber at a third different height below the first height of the first gas passage and above the second height of the second gas passage.
地址 Santa Clara CA US