Optoelectronic semiconductor chip and method of producing an optoelectronic semiconductor chip

摘要

An optoelectronic semiconductor chip having a semiconductor layer sequence includes at least one active layer that generates primary radiation; a plurality of conversion layers that at least partially absorb the primary radiation and convert the primary radiation into secondary radiation of a longer wavelength than the primary radiation; and a roughened portion that extends at least into one of the conversion layers, wherein the roughened portion has a random structure, the semiconductor layer sequence is arranged on a carrier, a top side of the semiconductor layer sequence facing away from the carrier is formed by the roughened portion, the at least one active layer is located between the carrier and the conversion layers, and the roughened portion includes a plurality of recesses free of a semiconductor material.

主权项

1. An optoelectronic semiconductor chip having a semiconductor layer sequence comprising:
at least one active layer that generates primary radiation; a plurality of conversion layers that at least partially absorb the primary radiation and convert the primary radiation into secondary radiation of a longer wavelength than the primary radiation; and a roughened portion consisting of a continuous random structure, wherein the semiconductor layer sequence is arranged on a carrier, a top side of the semiconductor layer sequence facing away from the carrier is formed by the roughened portion, the at least one active layer is located between the carrier and the conversion layers, the semiconductor layer sequence is formed by a single layer sequence epitaxially grown as a whole and comprises both the at least one active layer and the conversion layers which are monolithically integrated in the semiconductor layer sequence, the roughened portion comprises a plurality of recesses free of a semiconductor material, the roughened portion is the only structuring of the top side, the semiconductor layer sequence is based on InGaAlN and a thickness of the semiconductor layer sequence is less than or equal to 8 μm, and the roughened portion passes completely through the conversion layers in selected places and toward the at least one active layer so that the conversion layers are completely removed in the selected places, when the optoelectronic semiconductor chip is viewed in plan view.