| 发明名称 | Monolithic integration of heterojunction solar cells | ||
| 摘要 | A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the semiconductor substrate to form doped alternating regions with opposite conductivity. A doped layer is formed over a first side the semiconductor substrate. A conductive material is patterned over the doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure. | ||
| 申请公布号 | US9306106(B2) | 申请公布日期 | 2016.04.05 |
| 申请号 | US201213718819 | 申请日期 | 2012.12.18 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION | 发明人 | Bedell Stephen W.;Hekmatshoartabari Bahman;Sadana Devendra K.;Shahidi Ghavam G.;Shahrjerdi Davood |
| 分类号 | H01L31/0747;H01L31/068;H01L31/05;H01L31/0475;H01L31/18;H01L31/20 | 主分类号 | H01L31/0747 |
| 代理机构 | Tutunjian & Bitetto, P.C. | 代理人 | Tutunjian & Bitetto, P.C. ;Percello Louis J. |
| 主权项 | 1. A method for fabricating a device with integrated photovoltaic cells, comprising: supporting a semiconductor substrate on a first handle substrate; doping the semiconductor substrate to form alternating regions with opposite conductivity; forming at least one doped layer over a first side of the semiconductor substrate; and patterning a conductive material over the least one doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure. | ||
| 地址 | Armonk NY US | ||