Mix doping of a semi-insulating Group III nitride

摘要

Embodiments of a semi-insulating Group III nitride and methods of fabrication thereof are disclosed. In one embodiment, a semi-insulating Group III nitride layer includes a first doped portion that is doped with a first dopant and a second doped portion that is doped with a second dopant that is different than the first dopant. The first doped portion extends to a first thickness of the semi-insulating Group III nitride layer. The second doped portion extends from approximately the first thickness of the semi-insulating Group III nitride layer to a second thickness of the semi-insulating Group III nitride layer. In one embodiment, the first dopant is Iron (Fe), and the second dopant is Carbon (C). In another embodiment, the semi-insulating Group III nitride layer is a semi-insulating Gallium Nitride (GaN) layer, the first dopant is Fe, and the second dopant is C.

主权项

1. A semiconductor device comprising:
a semi-insulating Group III nitride layer having a top surface and a bottom surface, the semi-insulating Group III nitride layer having:
a lower portion that is adjacent the bottom surface that is doped with a first dopant; andan upper portion that is adjacent the top surface that is doped with a second dopant that is different than the first dopant, wherein a concentration of the first dopant in the lower portion exceeds a concentration of the second dopant in the lower portion throughout the lower portion, wherein a concentration of the second dopant in at least a top part of the upper portion exceeds a concentration of the first dopant in at least the top part of the upper portion throughout the top part of the upper portion.