发明名称 Integrated capacitor based power distribution
摘要 An embodiment provides power (having low voltage, high current, and high current density) to ultra low voltage non-CMOS based devices using a distributed capacitor that is integrated onto the same chip as the non-CMOS devices. For example, an embodiment provides a spin logic gate adjacent dielectric material and first and second plates of a capacitor. The capacitor discharges low voltage/high current to the spin logic gate using a step down switched mode power supply that charges numerous capacitors during one clock cycle (using a switching element configured in a first orientation) and discharges power from the capacitors during the opposite clock cycle (using the switching element configured in a second orientation). The capacitors discharge the current out of plane and to the spin logic devices without having to traverse long power dissipating interconnect paths. Other embodiments are described herein.
申请公布号 US9305629(B2) 申请公布日期 2016.04.05
申请号 US201313976053 申请日期 2013.03.15
申请人 Intel Corporation 发明人 Manipatruni Sasikanth;Nikonov Dmitri E.;Young Ian A.
分类号 G11C11/16;G11C5/14 主分类号 G11C11/16
代理机构 Trop, Pruner & Hu, P.C. 代理人 Trop, Pruner & Hu, P.C.
主权项 1. An apparatus comprising: a supply voltage plane that includes an array of supply voltage lines; a ground plane that includes an array of ground lines; an array of capacitors formed from the arrays of supply voltage lines and ground lines; a first capacitor, formed at a first intersection between a first supply voltage line, included in the array of supply voltage lines, and a first ground line, included in the array of ground lines; wherein the capacitor comprises a first plate that includes a portion of the first supply voltage line, a second plate that includes a portion of the first ground line, and a first dielectric formed between the first and second plates; a device, to electrically couple to the capacitor, comprising at least one of a tunnel field-effect transistor, spin transfer torque (STT) memory, and a spin logic device; and a switching element coupled to the capacitor and included within a switching mode power supply; wherein (a) the array of capacitors, which includes the first capacitor, the device, and the switching element are all formed on a single monolithic substrate; and (b) the switching element discharges the capacitor to drive current between the first and second plates and then to the device.
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