| 摘要 |
According to one embodiment, a resistance change type memory includes a first and a second bit lines, a memory cell connected between the first and second bit lines and including a variable resistance element as a memory element and a first select element including a first control terminal connected to a word line, and an auxiliary circuit connected to the first bit line and including a second select element including a second control terminal connected to a control line. When data is read from the memory cell, a first current in a read current supplied to the first bit line is supplied to the memory element and the first select element, and a second current in the read current is supplied to the second select element. |
| 主权项 |
1. A resistance change type memory comprising:
a first bit line and a second bit line extending in a first direction; a first word line extending in a second direction; a control line extending in the second direction; a memory cell connected between the first and second bit lines and including a variable resistance element as a memory element and a first select element including a first control terminal connected to the first word line; and a circuit connected to the first bit line and including a second select element, the second select element including a second control terminal connected to the control line, wherein one end of the second select element is connected to a ground line, wherein, when reading data from the memory cell, a read current is supplied to the first bit line, the memory cell and the circuit are turned on, a first current included in the read current is supplied to the memory element and the first select element, and a second current included in the read current is supplied to the second select element. |
