Electrostatic discharge protection structure

摘要

An ESD protection structure includes a first conductive type substrate; first and second well regions of a first conductive type; a third well region of a second conductive type located between the first and second well regions; a first doped region of the first conductive type and a second doped region of the second conductive type disposed in the first well region; a third doped region of the first conductive type and a fourth doped region of the second conductive type disposed in the second well region; and fifth and sixth doped regions disposed at an interface of the first and third well regions or an interface of the second and third well regions. The fifth doped region of the first conductive type is located in the first or second well region, and the sixth doped region of the second conductive type is located in the third well region.

主权项

1. An electrostatic discharge protection structure, comprising:
a substrate, having a first conductive type; a first well region and a second well region, having the first conductive type and disposed separately on the substrate; a third well region, having a second conductive type, disposed on the substrate and located between the first well region and the second well region; a first doped region, having the first conductive type and disposed in the first well region; a second doped region, having the second conductive type and disposed in the first well region; a third doped region, having the first conductive type and disposed in the second well region; a fourth doped region, having the second conductive type and disposed in the second well region; and a fifth doped region and a sixth doped region, disposed adjacent to each other at one of an interface of the first well region and the third well region and an interface of the second well region and the third well region, wherein the fifth doped region has the first conductive type and is located in the first well region or the second well region, and the sixth doped region has the second conductive type and is located in the third well region.