Metallized via-holed ceramic substrate, and method for manufacture thereof

摘要

The present invention provides a metallized via-holed ceramic substrate having (1) a sintered ceramic substrate, (2) an electroconductive via formed in the sintered ceramic substrate, having an electroconductive metal closely filled in a through-hole of the sintered ceramic substrate, wherein the electroconductive metal contains a metal (A) with melting point of 600° C. to 1100° C., a metal (B) with higher melting point than the metal (A), and an active metal, (3) a wiring pattern on at least one face of the sintered ceramics substrate, having an electroconductive surface layer and a plating layer thereon, wherein the electroconductive surface layer consists of an electroconductive metal containing the metal (A), the metal (B), and an active metal, (4) an active layer formed in the interface between the electroconductive via and the sintered ceramic substrate, and (5) an active layer formed in the interface between the electroconductive surface layer and the sintered ceramic substrate.

主权项

1. A metallized via-holed ceramic substrate comprising: a sintered ceramic substrate; an electroconductive via formed in the sintered ceramic substrate, said electroconductive via having an electroconductive metal closely filled in a through-hole of the sintered ceramic substrate, said electroconductive metal containing a metal (A) having a melting point of 600° C. to 1100° C., a metal (B) having a melting point higher than the melting point of the metal (A), and an active metal; a wiring pattern on at least one face of the sintered ceramic substrate, said wiring pattern having an electroconductive surface layer and a plating layer on a surface of the electroconductive surface layer, said electroconductive surface layer consisting of an electroconductive metal containing the metal (A), the metal (B), and the active metal; an active layer formed in an interface between the electroconductive via and the sintered ceramic substrate; and an active layer formed in an interface between the electroconductive surface layer and the sintered ceramic substrate, wherein said metal (A) having a melting point of 600° C. to 1100° C. is one or more selected from a group consisting of gold solder, silver solder, and copper; and said metal (B) having a melting point higher than the melting point of the metal (A) is one or more selected from a group consisting of silver, copper, and gold.