Apparatus and methods for continuous flow synthesis of semiconductor nanowires

摘要

Apparatuses and methods for synthesizing nanoscale materials are provided, including semiconductor nanowires. Precursor solutions include mixed reagent precursor solutions of metal and chalcogenide precursors and a catalyst, where such solutions are liquid at room temperature. The precursor solutions are mixed by dividing a solution flow into multiple paths and converging the paths to form a uniform solution. A thermally controlled reactor receives the uniform solution to form semiconductor nanowires. Various electronic, optical, and sensory devices may employ the semiconductor nanowires described herein, for example.

主权项

1. A continuous flow method of producing nanowires, the method comprising:
adding a metal precursor solution to a first continuous flow reactor; adding an anion precursor solution to the first continuous flow reactor; adding a catalyst precursor solution to the first continuous flow reactor; and creating a plurality of metal-anion nanowires having an average length of 1 to 40 μm, an average diameter of 1 to 100 nm, and an average aspect ratio (length to width ratio) of 10:1 to 1000:1; wherein the first continuous flow reactor is maintained at a temperature between, and including, 170° C. to 300° -C.