Multilayer ceramic electronic device

摘要

A multilayer ceramic electronic device comprising a lamination in which an internal electrode layer 3 and a dielectric layer 2 are laminated alternatively, wherein the dielectric layer 2 is comprised of a dielectric ceramic composition including a main component represented by a general formula of ABO3 and a rare-earth component R, and segregation phases 5 including the rare-earth component R are present in the dielectric layer 2. When the dielectric layer 2 is separated to six areas by dividing the dielectric layer 2 sandwiched by a pair of the internal dielectric layers 3 in the thickness direction, there are the R segregation phases present in two neighboring areas 2a respectively adjacent to the pair of the internal electrode layers 3 in the dielectric layer 3 at a ratio of double or more compared with the R segregation phases present in two central areas 2b located at a substantially center in the dielectric layer 2.

主权项

1. A multilayer ceramic electronic device comprising a lamination in which an internal electrode layer and a dielectric layer are laminated alternatively, wherein
the dielectric layer is comprised of a dielectric ceramic composition including a main component represented by a general formula of ABO3 (A is at least one selected from Ba, Sr and Ca, and B is at least one selected from Ti, Zr and Hf) and a rare-earth component R (R is at least one selected from Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu), R segregation phases including the rare-earth component R are present in the dielectric layer, and when the dielectric layer is separated to six areas by dividing the dielectric layer sandwiched by a pair of the internal dielectric layers in the thickness direction, there are the R segregation phases present in two neighboring areas respectively adjacent to the pair of the internal electrode layers in the dielectric layer at a ratio of double or more compared with the R segregation phases present in two central areas located at a substantially center in the dielectric layer.