发明名称 VAPOR DEPOSITION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a vapor deposition method of forming an excellent layer having a stable thickness even with a material having high reactivity.SOLUTION: A vapor deposition method includes a tooling process and a film deposition process. In the tooling process, a vapor deposition start time is determined based upon a rate of variation in value obtained by dividing, by total pressure, a total of partial pressure based upon a mass charge ratio representing oxygen atoms, partial pressure based upon a mass charge ratio representing nitrogen atoms, and partial pressure based upon a mass charge ratio representing carbon atoms. A vapor deposition material is deposited on a sample substrate. Based upon a thickness of a vapor deposition material-containing layer, correction relation between a vapor deposition rate measured by a film thickness sensor and a film deposition speed of the vapor deposition material which is actually deposited is determined. In the film deposition process, the vapor deposition material is deposited on an object including a substrate according to the correction relation.SELECTED DRAWING: Figure 1
申请公布号 JP2016044324(A) 申请公布日期 2016.04.04
申请号 JP20140168583 申请日期 2014.08.21
申请人 PANASONIC IP MANAGEMENT CORP 发明人 WATANABE KENICHIRO;AJIKI TAKASHI;KITAMURA KAZUKI;ITO NOBUHIRO;IDE NOBUHIRO
分类号 C23C14/24;H01L51/50;H05B33/10 主分类号 C23C14/24
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