发明名称 HIGH-PURITY INDIUM, AND PRODUCTION METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a method for producing high-purity In having 6N5 or higher purity at a low production cost by a wet method by using low-purity 4N In as a raw material.SOLUTION: The method for producing high-purity In comprises the steps of: using 4N(99.99%) In as an anode and sandblasted Ti plate as a cathode; and performing electrolytic refining in an electrolytic solution, to which sodium oxalate, NaCl and SrCOare added, to obtain high-purity In having 6N5(99.99995%) or higher purity as electrodeposited In on the cathode.SELECTED DRAWING: Figure 1
申请公布号 JP2016044318(A) 申请公布日期 2016.04.04
申请号 JP20140167983 申请日期 2014.08.20
申请人 JX NIPPON MINING & METALS CORP 发明人 HINO EIJI
分类号 C25C1/22;C22B3/44;C22B58/00;C22C28/00;C25C7/04;C25C7/06 主分类号 C25C1/22
代理机构 代理人
主权项
地址