发明名称 |
HIGH-PURITY INDIUM, AND PRODUCTION METHOD THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing high-purity In having 6N5 or higher purity at a low production cost by a wet method by using low-purity 4N In as a raw material.SOLUTION: The method for producing high-purity In comprises the steps of: using 4N(99.99%) In as an anode and sandblasted Ti plate as a cathode; and performing electrolytic refining in an electrolytic solution, to which sodium oxalate, NaCl and SrCOare added, to obtain high-purity In having 6N5(99.99995%) or higher purity as electrodeposited In on the cathode.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016044318(A) |
申请公布日期 |
2016.04.04 |
申请号 |
JP20140167983 |
申请日期 |
2014.08.20 |
申请人 |
JX NIPPON MINING & METALS CORP |
发明人 |
HINO EIJI |
分类号 |
C25C1/22;C22B3/44;C22B58/00;C22C28/00;C25C7/04;C25C7/06 |
主分类号 |
C25C1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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