发明名称 SOLID STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF
摘要 To increase an effective pixel region, according to an embodiment, a semiconductor substrate has a first region where a photoelectric conversion device is installed, a second region which is formed around the first region and is installed with a device, and a third region which is formed between the first region and the second region and is installed with the photoelectric conversion device. A first interlayer insulating film is formed on the first region and the third region. A second interlayer insulating film is formed on the second region and is thicker than the first interlayer insulating film. A resin material is formed on a groove formed on a third region side of the first interlayer insulating film, and on the first interlayer insulating film of the first region.
申请公布号 KR20160035957(A) 申请公布日期 2016.04.01
申请号 KR20150020860 申请日期 2015.02.11
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 HASHIMOTO KOKICHI
分类号 H01L27/146 主分类号 H01L27/146
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