发明名称 |
WRITE ASSIST SRAM CIRCUITS AND METHODS OF OPERATION |
摘要 |
A two-transistor memory cell based upon a thyristor for an SRAM integrated circuit is described together with methods of operation. The memory cell can be implemented in different combinations of MOS and bipolar select transistors, or without select transistors, with thyristors in a semiconductor substrate with shallow trench isolation. Standard CMOS process technology can be used to manufacture the SRAM. |
申请公布号 |
WO2016049599(A1) |
申请公布日期 |
2016.03.31 |
申请号 |
WO2015US52497 |
申请日期 |
2015.09.25 |
申请人 |
KILOPASS TECHNOLOGY, INC. |
发明人 |
LUAN, HARRY;BATEMAN, BRUCE;AXELRAD, VALERY;CHENG, CHARLIE;CHEVALLIER, CHRISTOPHE |
分类号 |
G11C11/00;G11C7/12;G11C11/34;G11C11/411;G11C11/419 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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