发明名称 METHODS AND APPARATUSES INCLUDING AN ACTIVE AREA OF A TAP INTERSECTED BY A BOUNDARY OF A WELL
摘要 Apparatuses and methods are disclosed. One such apparatus includes a well having a first type of conductivity formed within a semiconductor structure having a second type of conductivity. A boundary of the well intersects an active area of a tap to the well.
申请公布号 US2016093694(A1) 申请公布日期 2016.03.31
申请号 US201414502804 申请日期 2014.09.30
申请人 Micron Technology, Inc. 发明人 Smith Michael
分类号 H01L29/06;H01L29/36;H01L29/10;H01L21/265;H01L21/762 主分类号 H01L29/06
代理机构 代理人
主权项 1. An apparatus comprising: a well having a first type of conductivity formed within a semiconductor structure having a second type of conductivity; and a tap to the well, wherein a boundary of the well between the well and the semiconductor structure intersects an active area of the tap such that the boundary occurs within the active area and the boundary separates a first doped area of the active area from a second doped area of the active area, wherein the second doped area is more heavily doped than the first doped area with a same conductivity dopant.
地址 Boise ID US