| 发明名称 |
Memory Cells and Methods of Forming Memory Cells |
| 摘要 |
Some embodiments include a memory cell that has an electrode, a switching material over the electrode, a buffer region over the switching material, and an ion reservoir material over the buffer region. The buffer region includes one or more elements from Group 14 of the periodic table in combination with one or more chalcogen elements. Some embodiments include methods of forming memory cells. |
| 申请公布号 |
US2016093803(A1) |
申请公布日期 |
2016.03.31 |
| 申请号 |
US201514956291 |
申请日期 |
2015.12.01 |
| 申请人 |
Micron Technology, Inc. |
发明人 |
Petz Christopher W.;Collins Dale W.;Sills Scott E.;Yasuda Shuichiro |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory cell, comprising:
an electrode; a switching material over the electrode; a buffer region over the switching material; an ion reservoir material over the buffer region; and the buffer region comprising a laminate containing layers that comprise Group 14 elements alternating with layers that do not comprise Group 14 elements. |
| 地址 |
Boise ID US |
