| 主权项 |
1. An operation method for a memory device including:
a first memory element provided on a side of a first plane of a semiconductor member, the first memory element having a first electrode and a first charge storage layer, the semiconductor member extending to a first direction, the first plane being along the first direction; a second memory element on a side of a second plane of the semiconductor member, the second memory element having a second electrode and a second charge storage layer, the second plane being opposed on the first plane with the semiconductor member; a first word line connected to the first electrode; and a second word line connected to the second electrode, the operation method comprising: when writing a first data to the first memory element, applying a first potential on the second word line to write a second data to the second memory, the first potential increasing by a first step voltage; and applying a second potential on the first word line to write the first data to the first memory, the second potential increasing by a second step voltage. |
