发明名称 |
PREPARATION PROCESS OF IMAGE SENSORS |
摘要 |
The invention relates to the field of semiconductor, more particularly, to a preparation process of image sensors, comprising: Step S1, providing a semiconductor structure, a top of which is provided with a groove, and leads being formed in said groove, the top of said semiconductor structure and an exposed surface of said groove are covered with a first dielectric layer; Step S2: depositing a second dielectric layer covering the upper surface of said first dielectric layer and said leads and filling said groove; Step S3: performing a reversed-etching process to thin said second dielectric layer, and to form a convex structure on a surface of said second dielectric layer above the groove; Step S4: performing a planarization process to said second dielectric layer to improve surface evenness of said second dielectric layer after grinding by the convex structure. |
申请公布号 |
US2016093663(A1) |
申请公布日期 |
2016.03.31 |
申请号 |
US201514813612 |
申请日期 |
2015.07.30 |
申请人 |
Wuhan Xinxin Semiconductor Manufacturing Co., Ltd. |
发明人 |
HU Siping;ZHU Jifeng;XIAO Sheng'an;DONG Jinwen |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
1. A preparation process of image sensors, comprising:
Step S1: providing a semiconductor structure, a top of which is provided with a groove, and leads being formed in said groove, the top of said semiconductor structure and an exposed surface of said groove are covered with a first dielectric layer; Step S2: depositing a second dielectric layer covering the upper surface of said first dielectric layer and said leads and filling said groove; Step S3: performing a reversed etching process to thin said second dielectric layer, and to form a convex structure on a surface of said second dielectric layer above the groove; Step S4: performing a planarization process to said second dielectric layer to improve surface evenness of said second dielectric layer after grinding by the convex structure. |
地址 |
Hubei CN |