MEMORY DEVICES INCLUDING ONE-TIME PROGRAMMABLE MEMORY CELLS

摘要

A memory device including one-time programmable memory cells has a semiconductor substrate with a write region and a read region, a write gate provided on the write region, a read gate provided on the read region, first and second junction patterns provided at both sides of the read gate, and insulating dielectric patterns interposed between the write and read gates and the semiconductor substrate. The read region may have a different conductivity type from the first and second junction patterns, and the write region may have the same conductivity type as the first and second junction patterns.

主权项

1. A memory device, comprising:
a semiconductor substrate with a write region and a read region; a write gate on top of the write region; a read gate on top of the read region; a first junction pattern at a first side of the read gate; a second junction pattern at a second side of the read gate; and insulating dielectric patterns interposed between the write gate and the semiconductor substrate and between the read gate and the semiconductor substrate, wherein the read region of the semiconductor substrate has a different conductivity type from the first and second junction patterns, wherein the write region of the semiconductor substrate has the same conductivity type as the first and second junction patterns, and wherein the memory device is a one-time programmable (OTP) memory device.