CARBOSILANE SUBSTITUTED AMINE PRECURSORS FOR DEPOSITION OF SI-CONTAINING FILMS AND METHODS THEREOF

摘要

Disclosed are Si-containing film forming compositions comprising carbosilane substituted amine precursors. The carbosilane substituted amine precursors have the formula (R1)aN(-SiHR2-CH2-SiH2R3)3-a, wherein a = 0 or 1; R1 is H, a C1 to C6 alkyl group, or a halogen; R2 and R3 is each independently H; a halogen; an alkoxy group having the formula OR', wherein R' is an alkyl group (C1 to C6); or an alkylamino group having the formula NR"2, wherein each R" is independently H, a C1-C6 alkyl group, a C1-C6 alkenyl group, or a C3-C10 aryl or heterocycle group. Also disclosed are methods of synthesizing the carbosilane substituted amine precursors and their use for deposition processes.