| 发明名称 |
METAL-GATE WITH AN AMORPHOUS METAL LAYER |
| 摘要 |
A particular semiconductor device includes a substrate, a source contact, a drain contact, and a metal-gate. The substrate includes a source region, a drain region, and a channel. The source contact is coupled to the source region. The drain contact is coupled to the drain region. The metal-gate is coupled to the channel. The metal-gate includes an amorphous metal layer. |
| 申请公布号 |
WO2016048611(A1) |
申请公布日期 |
2016.03.31 |
| 申请号 |
WO2015US48175 |
申请日期 |
2015.09.02 |
| 申请人 |
QUALCOMM INCORPORATED |
发明人 |
XU, JEFFREY JUNHAO;WANG, ZHONGZE;RIM, KERN;SONG, STANLEY SEUNGCHUL;YEAP, CHOH FEI |
| 分类号 |
H01L21/8238;H01L21/8234;H01L27/092;H01L29/66;H01L29/78 |
主分类号 |
H01L21/8238 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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