发明名称 |
CROSS-COUPLED THYRISTOR SRAM SEMICONDUCTOR STRUCTURES AND METHODS OF FABRICATION |
摘要 |
A memory cell based upon thyristors for an SRAM integrated circuit is described together with a process for fabricating it. The memory cell can be implemented in different combinations of MOS and bipolar select transistors, or without select transistors, with thyristors in a semiconductor substrate with shallow trench isolation. Standard CMOS process technology can be used to manufacture the SRAM. Special circuitry provides lowered power consumption during standby. |
申请公布号 |
WO2016049590(A1) |
申请公布日期 |
2016.03.31 |
申请号 |
WO2015US52480 |
申请日期 |
2015.09.25 |
申请人 |
KILOPASS TECHNOLOGY, INC. |
发明人 |
LUAN, HARRY;BATEMAN, BRUCE;AXELRAD, VALERY;CHENG, CHARLIE;CHEVALLIER, CHRISTOPHE |
分类号 |
G11C11/00;G11C7/12;G11C11/34;G11C11/411;G11C11/419 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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