发明名称 |
METHOD FOR SOURCE-DRAIN JUNCTION FORMATION IN SILICON-GERMANIUM FINFET AND CORRESPONDING FINFET APPARATUS |
摘要 |
A portion of a bulk silicon (Si) is formed into a fin, having a fin base and, on the fin base, an in-process fin. The fin base is doped Si and the in-process fin is silicon germanium (SiGe). The in-process SiGe fin has a source region and a drain region. Boron is in-situ doped into the drain region and into the source region. Optionally, boron is in-situ doped by forming an epi-layer, having boron, on the drain region and on the source region, and drive-in annealing to diffuse boron in the source region and the drain region. |
申请公布号 |
WO2016048791(A1) |
申请公布日期 |
2016.03.31 |
申请号 |
WO2015US50694 |
申请日期 |
2015.09.17 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
MACHKAOUTSAN, VLADIMIR;XU, JEFFREY JUNHAO;SONG, STANLEY SEUNGCHUL;BADAROGLU, MUSTAFA;YEAP, CHOH FEI |
分类号 |
H01L29/78;H01L21/336;H01L29/10 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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