发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To reduce power consumption of a semiconductor device during stand-by.SOLUTION: A semiconductor device comprises: a first main electrode terminal 21 and a second main electrode terminal 22 arranged on a principal surface of a semiconductor substrate 1 so as to be separated from each other; an insulating film 16 formed on the principal surface of the semiconductor substrate 1; and a thin-film resistive layer 18 whose one end side is connected with the first main electrode terminal 21 and whose the other end side is connected with the second main electrode terminal 22, and that is formed in a spiral shape on the insulating film 16 so as to surround the first main electrode terminal 21. The thin-film resistive layer 18 extends while meandering in a thickness direction of the semiconductor substrate 1.SELECTED DRAWING: Figure 2 |
申请公布号 |
JP2016042542(A) |
申请公布日期 |
2016.03.31 |
申请号 |
JP20140166277 |
申请日期 |
2014.08.19 |
申请人 |
FUJI ELECTRIC CO LTD |
发明人 |
TANAKA TAKAHIDE;YAMAJI MASAHARU |
分类号 |
H01L29/06;H01L21/329;H01L21/336;H01L21/822;H01L27/04;H01L29/41;H01L29/78;H01L29/861;H01L29/868 |
主分类号 |
H01L29/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|