| 发明名称 |
MONOLITHIC IMAGE CHIP FOR NEAR-TO-EYE DISPLAY |
| 摘要 |
A set of light emitting devices can be formed on a substrate. A growth mask having a first aperture in a first area and a second aperture in a second area is formed on a substrate. A first nanowire and a second nanowire are formed in the first and second apertures, respectively. The first nanowire includes a first active region having a first band gap and a second active region having a second band gap. The first band gap is greater than the second band gap. The second nanowire includes an active region having the first band gap and does not include, or is adjoined to, any material having the second band gap. |
| 申请公布号 |
US2016093665(A1) |
申请公布日期 |
2016.03.31 |
| 申请号 |
US201514865459 |
申请日期 |
2015.09.25 |
| 申请人 |
GLO AB |
发明人 |
SCHUBERT Martin;THOMPSON Daniel Bryce;GRUNDMANN Michael;GARDNER Nathan |
| 分类号 |
H01L27/15;H01L33/00;H01L33/30;H01L33/06;H01L33/24 |
主分类号 |
H01L27/15 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor structure including light emitting devices, comprising:
a first light emitting device containing a first nanowire located on a substrate, wherein the first nanowire comprises a first active region, the first active region including a first lower active region having a first band gap and a first upper active region having a second band gap, wherein the first band gap is greater than the second band gap; and a second light emitting device containing a second nanowire located on the substrate, wherein the second nanowire comprises a second active region having the first band gap and does not include, nor is in physical contact with, any material having the second band gap. |
| 地址 |
Lund SE |
