| 摘要 |
Provided are a thin-film transistor, an array substrate comprising the thin-film transistor, and a display device comprising the array substrate. The thin-film transistor comprises a gate electrode (1), a source electrode (5), a drain electrode (6), and a semiconductor layer (4) and an insulation layer (2) which are arranged among the source electrode (5), the drain electrode (6) and the gate electrode (1), wherein the insulation layer (2) is made of an inorganic insulation material, and a decoration layer (3) is arranged in a region which is between the insulation layer (2) and the semiconductor layer (4) and corresponds to the insulation layer (2), the decoration layer (3) being made of an organic aliphatic silane material. The thin-film transistor has a flatter insulation layer surface, and has a relatively small surface defect state or substantially has no surface defect state. |
