发明名称 半導体装置の製造方法
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can stabilize wire bondability and improve a heat dissipation performance.SOLUTION: A semiconductor device manufacturing method comprises: die bonding a switching element 4 to a first region 5a of a lead frame 5; die bonding a driving element 6 for driving the switching element 4 to a second region 5b of the lead frame 5; placing the lead frame 5 on a heater plate 2 and bonding Au wires 9 to the driving element 6 while heating the second region 5b of the lead frame 5 and the driving element 6; and attaching an insulation sheet 10 to a rear face of the first region of the lead frame 5 after bonding the Au wires 9 to the driving element 6. When the lead frame 5 is placed on the heater plate 2, the first region 5a of the lead frame 5 is arranged on a recess 8 provided on a top face of the heater plate 2.
申请公布号 JP5895861(B2) 申请公布日期 2016.03.30
申请号 JP20130015620 申请日期 2013.01.30
申请人 三菱電機株式会社 发明人 末吉 嵩修;梅崎 勇二;近藤 聡;岩澤 核
分类号 H01L21/60;H01L25/07;H01L25/18 主分类号 H01L21/60
代理机构 代理人
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