Structure comprising a gettering layer and a sublayer for adjusting the activation temperature and manufacturing method

摘要

The structure has two substrates e.g. silicon substrates, and a peripherally closed sealing joint for defining a sealing cavity in which a microelectronic device i.e. micro electro mechanical system, and a metallic getter layer (7) of a multilayer getter (6) are arranged, where the device is formed on one substrate (2). An adjustment sub-layer (8) is located between one of the substrates and the getter layer. The adjustment sub-layer modulates the activation temperature of the getter layer. A coupling sub-layer (9) is arranged between the adjustment sub-layer and one of the substrates. The adjustment sub-layer has thickness between 50 and 500 nanometers. The getter layer has thickness between 100 and 200 nanometers. An independent claim is also included for a method for realizing a structure.