| 发明名称 |
Method of fabricating a light emitting diode having improved external light extraction |
| 摘要 |
A light-emitting diode (20) with improved light extraction is made by anisotropically etching the surface of a Group III nitride layer to develop crystal facets on the group III nitride surface (24,32) in which the facets are along a small integer Miller index plane of the Group III nitride surface. |
| 申请公布号 |
EP1983581(B1) |
申请公布日期 |
2016.03.30 |
| 申请号 |
EP20080161100 |
申请日期 |
2007.01.19 |
| 申请人 |
CREE, INC. |
发明人 |
EDMOND, JOHN A.;DONOFRIO, MATTHEW;SLATER, DAVID B. JR;KONG, HUA-SHANG |
| 分类号 |
H01L33/00;H01L33/10;H01L33/14;H01L33/16;H01L33/20;H01L33/22;H01L33/32;H01L33/38;H01L33/44 |
主分类号 |
H01L33/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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