SPUTTERING TARGET AND METHOD FOR MANUFACTURING TRANSPARENT CONDUCTIVE FILM USING THE SAME

摘要

The present invention relates to a sputtering target and a preparation method of a transparent conductive film having uniform thickness and crystallinity. The sputtering target of the present invention comprises: a first crystal including In_2O_3 having a bixbyite structure and SnO_2 having a tetragonal system; and a second crystal including In_4Sn_3O_12 having an orthorhombic system. The area of the second crystal forms 8 to 16% of the total area of the first and the second crystals.