| 摘要 |
A photoelectric conversion device with high open-circuit voltage and high conversion efficiency is provided. A photoelectric conversion device including a p-n junction is formed by stacking a first semiconductor layer having p-type conductivity, a second semiconductor layer having p-type conductivity, and a third semiconductor layer having n-type conductivity between a pair of electrodes. The first semiconductor layer is a compound semiconductor layer, and the second semiconductor layer is formed using an organic compound and an inorganic compound. A material having a high hole-transport property is used as the organic compound, and a transition metal oxide having an electron-accepting property is used as the inorganic compound. |
