发明名称 |
SYSTEMS AND METHODS FOR FORMING THERMOELECTRIC DEVICES |
摘要 |
A vapor phase method for forming a thermoelectric element comprises providing a substrate in a reaction space, the substrate including a pattern of a metallic material adjacent to the substrate, which metallic material is configured to catalyze the oxidation of the substrate. The metallic material is then exposed to a gas having an oxidizing agent and a chemical etchant to form holes in or wires from the substrate. |
申请公布号 |
EP2885823(A4) |
申请公布日期 |
2016.03.30 |
申请号 |
EP20130829134 |
申请日期 |
2013.08.16 |
申请人 |
SILICIUM ENERGY, INC. |
发明人 |
BOUKAI, AKRAM, I.;THAM, DOUGLAS, W.;HOPKINS, ADAM |
分类号 |
H01L35/02;H01L35/32;H01L35/34 |
主分类号 |
H01L35/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|