发明名称 SYSTEMS AND METHODS FOR FORMING THERMOELECTRIC DEVICES
摘要 A vapor phase method for forming a thermoelectric element comprises providing a substrate in a reaction space, the substrate including a pattern of a metallic material adjacent to the substrate, which metallic material is configured to catalyze the oxidation of the substrate. The metallic material is then exposed to a gas having an oxidizing agent and a chemical etchant to form holes in or wires from the substrate.
申请公布号 EP2885823(A4) 申请公布日期 2016.03.30
申请号 EP20130829134 申请日期 2013.08.16
申请人 SILICIUM ENERGY, INC. 发明人 BOUKAI, AKRAM, I.;THAM, DOUGLAS, W.;HOPKINS, ADAM
分类号 H01L35/02;H01L35/32;H01L35/34 主分类号 H01L35/02
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