Methods for etching a dielectric barrier layer in a dual damascene structure

摘要

Methods for eliminating early exposure of a conductive layer in a dual damascene structure and for etching a dielectric barrier layer in the dual damascene structure are provided. In one embodiment, a method for etching a dielectric barrier layer disposed on a substrate includes patterning a substrate having a dielectric bulk insulating layer disposed on a dielectric barrier layer using a hardmask layer disposed on the dielectric bulk insulating layer as an etching mask, exposing a portion of the dielectric barrier layer after removing the dielectric bulk insulating layer uncovered by the dielectric bulk insulating layer, removing the hardmask layer from the substrate, and subsequently etching the dielectric barrier layer exposed by the dielectric bulk insulating layer.

主权项

1. A method for etching a dielectric barrier layer disposed on a substrate, comprising:
patterning a substrate having a dielectric bulk insulating layer disposed on a dielectric barrier layer using a hardmask layer disposed on the dielectric bulk insulating layer as an etching mask; exposing a portion of the dielectric barrier layer after removing the dielectric bulk insulating layer uncovered by the dielectric bulk insulating layer; removing the hardmask layer from the substrate; and subsequently etching the dielectric barrier layer exposed by the dielectric bulk insulating layer, wherein subsequently etching the dielectric barrier layer further comprises: performing a treatment process on the dielectric barrier layer; performing a remote plasma process in an etching gas mixture supplied into the etching processing chamber to etch the treated dielectric barrier layer disposed on the substrate; and performing a plasma annealing process to anneal the dielectric barrier layer to remove the dielectric barrier layer from the substrate.