Semiconductor light emitting device

摘要

According to one embodiment, a semiconductor light emitting device includes a metal layer, a stacked structural body, a first electrode, a pad electrode, a first conductive layer, a second conductive layer and an insulating layer. The metal layer includes a major surface having a first region, a second region, a third region and a fourth region. The stacked structural body includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. The first semiconductor layer includes a first portion and a second portion. The second semiconductor layer is provided between the first region and the first portion. The first electrode is provided between the second region and the second portion. The pad electrode is provided on the third region. The first conductive layer is provided between the second region and the first electrode and between the third region and the pad electrode.

主权项

1. A semiconductor light emitting device, comprising:
a metal layer including a major surface having an inner region and an outer region, the inner region having a first region and a second region, the outer region being provided outside the inner region and having a third region and a fourth region, the first region and the second region being disposed between the third region and the fourth region; a stacked structural body provided on the major surface of the metal layer, the stacked structural body including
a first semiconductor layer of a first conductivity type including a first portion provided on the first region, a second portion provided on the second region, and a third portion provided on the fourth region,a second semiconductor layer of a second conductivity type provided between the first region and the first portion, the second semiconductor layer not overlapping the third portion, anda light emitting layer provided between the first portion and the second semiconductor layer; a first electrode provided between the second region and the second portion to be electrically connected to the second portion; a pad electrode provided on the third region; a first conductive layer provided between the second region and the first electrode and between the third region and the pad electrode, the first conductive layer being configured to electrically connect the first electrode to the pad electrode; a second conductive layer provided on the fourth region to be electrically connected to the first conductive layer, the second conductive layer includes:
a superimposed portion overlapping the third portion in a first direction from the first semiconductor layer toward the second semiconductor layer; anda non-superimposed portion not overlapping the first semiconductor layer in the first direction; a second electrode provided between the first region and the second semiconductor layer to be electrically connected to the second semiconductor layer and the metal layer; and an insulating layer including
a first insulating portion provided between the second region and the first conductive layer,a second insulating portion provided between the third region and the first conductive layer,a third insulating portion provided between the fourth region and the second conductive layer, anda fourth insulating portion, the second conductive layer being disposed between the fourth insulating portion and the fourth region, a part of the fourth insulating portion being disposed between the superimposed portion and the third portion, the second conductive layer being disposed between a part of the third insulating portion and the second electrode in a second direction perpendicular to the first direction.