Reading magnetic memory based on regions within a cell array

摘要

According to one embodiment, a magnetic memory includes a cell array includes a plurality of memory cells, each memory cell including a magnetoresistive effect element; and a read circuit to read data from a memory cell selected based on an address signal from among the memory cells. The read circuit selects one determination level from among a plurality of determination levels corresponding to a position of a magnetoresistive effect element in the cell array and uses the selected determination level to perform reading of the data.

主权项

1. A magnetic memory comprising:
a cell array including a plurality of memory cells arranged along first and second directions, the cell array including a first region and a second region around the first region, and each memory cell including a magnetoresistive effect element as a memory element; and a read circuit to read data from a memory cell selected based on an address signal from among the memory cells, wherein the read circuit selects one determination level from among a plurality of determination levels based on a region, from among the first and second regions, in which the selected memory cell is located, and uses the selected determination level to perform reading of the data from the selected memory cell.