发明名称 Power conversion apparatus
摘要 Provided is a power conversion apparatus that includes a power semiconductor module, a smoothing capacitor module, an alternating-current bus bar, a control circuit unit to control the power semiconductor element, and a flow channel formation body to form a flow channel through which a cooling medium flows. The power semiconductor module has a first heat dissipation portion and a second heat dissipation portion facing the first heat dissipation portion. A flow channel formation body external portion of the flow channel formation body has a first surface wall that faces the first heat dissipation portion with the flow channel therebetween, a second surface wall that faces the second heat dissipation portion with the flow channel therebetween, and a sidewall to connect the first surface wall and the second surface wall. The sidewall has an opening to insert the power semiconductor module into the flow channel.
申请公布号 US9301434(B2) 申请公布日期 2016.03.29
申请号 US201214131765 申请日期 2012.07.25
申请人 Hitachi Automotive Systems, Ltd. 发明人 Kuwano Morio;Hara Yosei;Hamada Haruki
分类号 H05K7/20;H02M7/00;B60L11/14;H05K7/14;B60L3/00;B60L11/00;B60L15/00;B60L15/20 主分类号 H05K7/20
代理机构 Crowell & Moring LLP 代理人 Crowell & Moring LLP
主权项 1. A power conversion apparatus, comprising: a power semiconductor module that has a power semiconductor element to convert a direct current into an alternating current; a smoothing capacitor module that smoothes the direct current; an alternating-current bus bar that transmits an alternating-current output of the power semiconductor element; a control circuit unit that controls the power semiconductor element; and a flow channel formation body that forms a flow channel through which a cooling medium flows, wherein the power semiconductor module has a first heat dissipation portion and a second heat dissipation portion facing the first heat dissipation portion with the power semiconductor element therebetween, a flow channel formation body external portion of the flow channel formation body has a first surface wall that faces the first heat dissipation portion of the power semiconductor module with the flow channel therebetween, a second surface wall that faces the second heat dissipation portion of the power semiconductor module with the flow channel therebetween, at the opposite side of the first surface wall with the power semiconductor module therebetween, and a sidewall that connects the first surface wall and the second surface wall, the sidewall has an opening to insert the power semiconductor module into the flow channel, the smoothing capacitor module is arranged at a position facing the second surface wall of the flow channel formation body external portion, the alternating-current bus bar is arranged at a position facing the first surface wall of the flow channel formation body external portion, and the control circuit unit is arranged at a position facing the alternating-current bus bar, at the opposite side of the first surface wall of the flow channel formation body external portion with the alternating-current bus bar therebetween.
地址 Hitachinaka-shi JP