High-k metal gate device structure for human blood gas sensing

摘要

A device structure for detecting partial pressure of oxygen in blood includes a semiconductor substrate including a source region and a drain region. A multi-layer gate structure is formed on the semiconductor substrate. The multi-layer gate structure includes an oxide layer formed over the semiconductor substrate, a high-k layer formed over the oxide layer, a metal gate layer formed over the high-k layer, and a polysilicon layer formed over the metal gate layer. A receiving area holds a blood sample in contact with the multi-layer gate structure. The high-k layer is exposed to contact the blood sample in the receiving area.

主权项

1. A device structure for detecting partial pressure of oxygen in blood, comprising:
a semiconductor substrate including a source region and a drain region; a multi-layer gate structure formed on the semiconductor substrate, the multi-layer gate structure comprising: an oxide layer formed over the semiconductor substrate; a high-k layer formed over the oxide layer; a metal gate layer formed over the high-k layer; and a polysilicon layer formed over the metal gate layer; a porous membrane layer formed over an entirety of the multi-layer gate structure; a receiving area for holding a blood sample in contact with a cross-section of the multi-layer gate structure such that the blood sample is filtered through the porous membrane prior to making contact with the cross-section of the multi-gate structure and such that the high-k layer is exposed to contact the blood sample in the receiving area; a processor for calculating a partial pressure of oxygen in the blood sample based on a detected shift in a flatband voltage of the multi-layer gate structure with respect to temperature; and wherein the porous membrane layer is configured to pass oxygenated blood therethrough such that the oxygenated blood makes contact with high-k layer and oxygen of the oxygenated blood fills vacancies within the high-k layer to shift the flatband voltage while platelets are prevented from making contact with the high-k layer.