| 发明名称 | Vertical field effect transistors | ||
| 摘要 | Vertical field effect transistors (FETs) with minimum pitch and methods of manufacture are disclosed. The structure includes at least one vertical fin structure and gate material contacting with the at least one vertical fin structure. The structure further includes metal material in electrical contact with the ends of the at least one vertical fin. | ||
| 申请公布号 | US9299835(B1) | 申请公布日期 | 2016.03.29 |
| 申请号 | US201414560672 | 申请日期 | 2014.12.04 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION | 发明人 | Anderson Brent A.;Nowak Edward J. |
| 分类号 | H01L29/78;H01L29/66 | 主分类号 | H01L29/78 |
| 代理机构 | Roberts, Mlotkowski, Safran & Cole PC. | 代理人 | Meyers Steven;Calderon Andrew M.;Roberts, Mlotkowski, Safran & Cole PC. |
| 主权项 | 1. A structure, comprising: at least one vertical fin structure; gate material contacting with the at least one vertical fin structure; and source and drain contacts at ends of the at least one vertical fin structure comprising metal material in electrical contact with the ends of the at least one vertical fin, wherein the at least one vertical fin structure comprises: a first portion of the at least one vertical fin structure having a first dimension;a second portion of the at least one vertical fin structure with a second dimension narrower than the first dimension; andepitaxially grown semiconductor material forming a third portion with a third dimension wider than the second dimension. | ||
| 地址 | Armonk NY US | ||