| 发明名称 | Phase change memory cells including nitrogenated carbon materials, and related methods | ||
| 摘要 | A phase change memory cell comprising a first chalcogenide compound on a first electrode, a first nitrogenated carbon material directly on the first chalcogenide compound, a second chalcogenide compound directly on the first nitrogenated carbon material, and a second nitrogenated carbon material directly on the second chalcogenide compound and directly on a second electrode. Other phase change memory cells are described. A method of forming a phase change memory cell and a phase change memory device are also described. | ||
| 申请公布号 | US9299929(B2) | 申请公布日期 | 2016.03.29 |
| 申请号 | US201514727106 | 申请日期 | 2015.06.01 |
| 申请人 | Micron Technology, Inc. | 发明人 | Gotti Andrea;Fumagalli Luca |
| 分类号 | H01L21/8239;H01L45/00;H01L27/24 | 主分类号 | H01L21/8239 |
| 代理机构 | TraskBritt | 代理人 | TraskBritt |
| 主权项 | 1. A phase change memory cell, comprising: a first chalcogenide compound on a first electrode; a first nitrogenated carbon material directly on the first chalcogenide compound; a first carbon material directly on the first nitrogenated carbon material; a second nitrogenated carbon material directly on the first carbon material; a second chalcogenide compound directly on the second nitrogenated carbon material; a third nitrogenated carbon material directly on the second chalcogenide compound; and a second carbon material directly on the third nitrogenated carbon material and directly on a second electrode, the second nitrogenated carbon material and the first nitrogenated carbon material each independently comprising greater than or equal to about 80 atomic percent carbon and less than or equal to about 20 atomic percent nitrogen. | ||
| 地址 | Boise ID US | ||