Methods for forming passivation protection for an interconnection structure

摘要

Methods for forming a passivation protection structure on a metal line layer formed in an insulating material in an interconnection structure are provided. In one embodiment, a method for forming passivation protection on a metal line in an interconnection structure for semiconductor devices includes selectively forming a metal capping layer on a metal line bounded by a dielectric bulk insulating layer in an interconnection structure formed on a substrate in a processing chamber incorporated in a multi-chamber processing system, in-situ forming a barrier layer on the substrate in the processing chamber; wherein the barrier layer is a metal dielectric layer, and forming a dielectric capping layer on the barrier layer in the multi-chamber processing system.

主权项

1. A method for forming passivation protection on a metal line in an interconnection structure for semiconductor devices, comprising:
selectively forming a metal capping layer on a metal line bounded by a dielectric bulk insulating layer in an interconnection structure formed on a substrate in a processing chamber incorporated in a multi-chamber processing system; in-situ forming a barrier layer on the substrate in the processing chamber; wherein the barrier layer is a metal dielectric layer; and forming a dielectric capping layer on the barrier layer in the multi-chamber processing system, wherein the dielectric capping layer is a low dielectric constant material having a dielectric constant less than 4.