发明名称 Semiconductor device
摘要 Even when a thermal stress is applied to an electrode pad, the electrode pad is prevented from being moved. A substrate of a semiconductor chip has a rectangular planar shape. The semiconductor chip has a plurality of electrode pads. The center of a first electrode pad is positioned closer to the end of a first side in the direction along the first side of the substrate as compared to the center of a first opening. Thus, in a part of the first electrode pad covered with an insulating film, a width of the part closer to the end of the first side in the direction along the first side is larger than another width of the part opposite to the above-mentioned width.
申请公布号 US9299632(B2) 申请公布日期 2016.03.29
申请号 US201414460223 申请日期 2014.08.14
申请人 RENESAS ELECTRONICS CORPORATION 发明人 Okada Makio;Maeda Takehiko
分类号 H01L23/31;H01L23/00 主分类号 H01L23/31
代理机构 McGinn IP Law Group PLLC 代理人 McGinn IP Law Group PLLC
主权项 1. A semiconductor device, comprising: a substrate having a first surface and a second surface opposite the first surface; a semiconductor chip having a first main surface, a second main surface opposite the first main surface and a first side on the first main surface, the semiconductor chip mounted on the substrate such that the second main surface is faced to the first surface of the substrate, the semiconductor chip including: a first electrode pad arranged along the first side on the first main surface;an insulating film formed over the first electrode on the first main surface, the insulating film having a first opening exposing a first part of the first electrode pad; a first electrode disposed outside of the semiconductor chip and arranged along the first side of the semiconductor chip, and the first electrode being connected with the first electrode pad on the semiconductor chip via a first wiring; and a sealed resin body sealing the substrate, the semiconductor chip, the first electrode, the first electrode pad and the first wiring, wherein an area of the first opening is smaller than an area of the first electrode pad in a plan view, wherein the first electrode pad is the closest to one end of the first side of the semiconductor chip, wherein a center of the first electrode pad is positioned closer to the one end in a direction along the first side as compared to a center of the first opening, and wherein the first wiring is joined with the first part of the first electrode pad on the semiconductor chip.
地址 Kawasaki-shi, Kanagawa JP