发明名称 Overcoming variance in stacked capacitors
摘要 In one embodiment of the invention, a method of forming an energy storage device is described in which a porous structure of an electrically conductive substrate is measured in-situ while being electrochemically etched in an electrochemical etching bath until a predetermined value is obtained, at which point the electrically conductive substrate may be removed from the electrochemical etching bath. In another embodiment, a method of forming an energy storage device is described in which an electrically conductive porous structure is measured to determine the energy storage capacity of the electrically conductive porous structure. The energy storage capacity of the electrically conductive porous structure is then reduced until a predetermined energy storage capacity value is obtained.
申请公布号 US9299505(B2) 申请公布日期 2016.03.29
申请号 US201113995140 申请日期 2011.12.14
申请人 Intel Corporation 发明人 Hannah Eric C.;Pint Cary L.;Holzwarth Charles W.;Gustafson John L.
分类号 H01G9/00;H01G11/04;H01G11/12;H01G11/14;H01G11/24;H01G11/84;H01G13/00 主分类号 H01G9/00
代理机构 Blakely, Sokoloff, Taylor & Zafman LLP 代理人 Blakely, Sokoloff, Taylor & Zafman LLP
主权项 1. A method of forming an energy storage device comprising: immersing an electrically conductive substrate in an electrochemical etching bath; measuring a porous structure of the electrically conductive substrate in-situ while electrochemically etching the electrically conductive substrate immersed in the electrochemical etching bath; and removing the electrically conductive substrate from the electrochemical etching bath upon obtaining a predetermined value.
地址 Santa Clara CA US