MAGNETIC TUNNEL JUNCTION DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

摘要

Provided is a magnetic tunnel junction device which can reverse the magnetization direction of a memory layer even by a current with low current density. The magnetic tunnel junction device includes a memory layer of which the magnetization direction is variable; a fixing layer which maintains a certain magnetization direction; and a spacer layer. The magnetic tunnel junction device performs a writing process by using a spin-torque-transfer method. In the magnetic tunnel junction device, one from a memory layer and a fixing layer includes a ferromagnetic insulating layer. According to another embodiment, the spacer layer may include a current path part and an insulating part.