A PATTERNING PROCESS

摘要

The purpose of the present invention is to provide an optimum pattern formation method as a method for forming a negative resist pattern formed by using an organic solvent phenomenon. The pattern formation method comprises the following processes of: forming a silicon-containing film on a body to be processed by using a composition for forming a silicon-containing film; forming a photoresist film by using a chemically amplified resist composition on the silicon-containing film; exposing the photoresist film with high energy radiation after performing heat treatment; and obtaining a negative pattern by dissolving an unexposed portion of the photoresist film by using a developing solution of an organic solvent. As the composition for forming the silicon-containing film, a contact angle for pure water after the exposure of the silicon-containing film corresponding to an exposed portion is 35°C or more and less than 70°C, when the photoresist film is exposed.