THREE DIMENSIONAL MEMORY DEVICE HAVING WELL CONTACT PILLAR AND METHOD OF MAKING THEREOF

摘要

A monolithic three dimensional memory device includes a semiconductor substrate (100) having a major surface and a doped well region (105) of a first conductivity type extending substantially parallel to the major surface of the semiconductor substrate, a plurality of NAND memory strings (150) extending substantially perpendicular to the major surface of the semiconductor substrate, and a plurality of substantially pillar-shaped support members (107) extending substantially perpendicular to the major surface of the semiconductor substrate, each support member including an electrically insulating outer material (109) surrounding an electrically conductive core material (111) that extends substantially perpendicular to the major surface of the semiconductor substrate and electrically contacts the doped well region.