METHOD FOR MANUFACTURING MEMORY DEVICE AND METHOD FOR MANUFACTURING METAL WIRING

摘要

A method for manufacturing a memory device of an embodiment includes: forming on a substrate a block copolymer layer which contains a first polymer and a second polymer having lower surface energy than that of the first polymer; performing thermal treatment on the block copolymer layer, to separate the block copolymer layer such that a first phase containing the first polymer and extending in the first direction and a second phase containing the second polymer and extending in the first direction are alternately arrayed; selectively forming on the first phase a first metal wiring layer extending in the first direction; forming on the first metal wiring layer a memory layer where resistance changes by application of a voltage; and forming on the memory layer a second metal wiring layer which extends in a second direction intersecting in the first direction.

主权项

1. A method for manufacturing a memory device, comprising:
forming a block copolymer layer on a substrate, the block copolymer layer containing a first polymer and a second polymer having lower surface energy than that of the first polymer; performing thermal treatment on the block copolymer layer, the thermal treatment separating the block copolymer layer such that a first phase containing the first polymer and extending in the first direction and a second phase containing the second polymer and extending in the first direction are alternately arrayed; forming a first metal wiring layer selectively on the first phase, the first metal wiring layer extending in the first direction; forming a memory layer on the first metal wiring layer, resistance of the memory layer being changed by application of a voltage; and forming a second metal wiring layer on the memory layer, the second metal wiring layer extending in a second direction, the second direction intersecting the first direction.