ETCHING APPARATUS AND ETCHING METHOD

摘要

According to one embodiment, an etching apparatus includes an etching chamber, a stage in the etching chamber, a plasma generator in the etching chamber, the plasma generator being opposite to the stage and irradiating an ion beam toward the stage, a supporter supporting the stage, the supporter having a rotational axis in a direction in which the ion beam is irradiated, a first driver changing a beam angle between a direction which is perpendicular to an upper surface of the stage and the direction in which the ion beam is irradiated, and a second driver which rotates the stage on the rotational axis.

主权项

1. An etching apparatus comprising:
an etching chamber; a stage in the etching chamber; a plasma generator in the etching chamber, the plasma generator being opposite to the stage and irradiating an ion beam toward the stage; a supporter supporting the stage, the supporter having a rotational axis in a direction in which the ion beam is irradiated; a first driver changing a beam angle between a direction which is perpendicular to an upper surface of the stage and the direction in which the ion beam is irradiated; a second driver which rotates the stage on the rotational axis; and a controller which is configured to: execute a first irradiation which irradiates the ion beam with the beam angle of a first value; and execute a second irradiation which irradiates the ion beam with the beam angle of a second value different from the first value after the first irradiation.